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TT: Fachverband Tiefe Temperaturen

TT 34: Correlated Electrons: f-Electron Systems and Heavy Fermions 1

TT 34.3: Vortrag

Mittwoch, 18. März 2020, 10:00–10:15, HSZ 204

TbRh₂Si₂ and TbIr₂Si₂: Single crystal growth and characterization — •Alexej Kraiker, Kristin Kliemt, and Cornelius Krellner — Physikalisches Institut, Goethe-Universität Frankfurt, 60438 Frankfurt am Main, Germany

In the last decades, many studies on RT₂Si₂ (R = rare earth, T = transition metal) ternary silicides have been made. The compounds which crystallize in the bodycentered tetragonal ThCr₂Si₂ structure exhibit exceptional magnetic properties such as superconductivity, valence fluctuations or the Kondo effect. In recent years, we have started to systematically investigate the magnetic properties of RRh₂Si₂ compounds, which present exciting surface properties, strongly influenced by the 4f-magetism [1,2]. So far, the magnetism of TbRh₂Si₂ and TbIr₂Si₂ has been studied on polycrystalline samples [3,4]. These compounds show antiferromagnetic order below T_N = 92 K and T_N = 84 K respectively with a magnetic ordering vector k = (001). In this contribution, we present the details of the crystal growth of single crystals of these two compounds grown by Bridgman method from indium flux. We show the results of specific heat, specific resistivity and magnetization measurements, with the focus on the magnetic transition [5].

[1] M. Güttler et al., Sci. Rep. 6, 24254 (2016)

[2] A. Generalov et al., Nano Lett. 17, 811 (2017).

[3] S. Quezel et al., Solid State Commun. 49, 7 (1984)

[4] T. Shigeoka et al., Physics Procedia, 75, 837-844 (2015)

[5] K. Kliemt et al., Cryst Res. Technol. 1900116 (2019)