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A: Fachverband Atomphysik
A 23: Interaction with VUV and X-ray light I
A 23.3: Vortrag
Donnerstag, 12. März 2020, 11:45–12:00, f107
K-shell photoionization of silicon ions — •Ticia Buhr1, Sebastian Stock2,3, Alexander Perry-Sassmannshausen1, Simon Reinwardt4, Michael Martins4, Sándor Ricz5, Alfred Müller1, Stephan Fritzsche2,3, and Stefan Schippers1 — 1Justus-Liebig-Universität Gießen, Germany — 2Helmholtz-Institut Jena, Germany — 3Friedrich-Schiller-Universität Jena, Germany — 4Universität Hamburg, Germany — 5Institute for Nuclear Research, Hungarian Academy of Sciences, Debrecen, Hungary
Silicon is one of the most abundant heavy elements in the Universe. Therefore, the investigation of the electronic structure of the silicon atom, its ions and their response to radiation is fundamental from an astrophysical point of view. Single and multiple photoionization of Siq+ (q=1,2,3) ions have been experimentally investigated in the photon energy range 1830 eV to 2100 eV using the PIPE setup [1, 2] at the synchrotron light source PETRA III. Siq+→Si(q+n)+ reaction channels with n up to 4 were studied. Pronounced resonance structures are observed for all ions and are associated with excitation or ionization of a K-shell electron. The experimental cross sections are compared with the results of multiconfiguration Dirac–Hartree–Fock calculations (MCDHF). The theoretical description accounts for initial excitation or ionization and the subsequent cascade of Auger processes.
[1] S. Schippers et al., J. Phys. B 47, 115602 (2014).
[2] S. Schippers et al., X-Ray Spectrometry, DOI:10.1002/xrs.3035.