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A: Fachverband Atomphysik
A 23: Interaction with VUV and X-ray light I
A 23.4: Vortrag
Donnerstag, 12. März 2020, 12:00–12:15, f107
Inner-Shell Multiple Photodetachment of Silicon Anions — •Alexander Perry-Sassmannshausen1, Ticia Buhr1, Alfred Müller1, Simon Reinwardt2, Florian Trinter3,4, and Stefan Schippers1 — 1Justus-Liebig-Universität Gießen, Germany — 2Universität Hamburg, Germany — 3FS-PETRA-S, DESY, Hamburg, Germany — 4Molecular Physics, Fritz-Haber-Institut, Berlin, Germany
Negative atomic ions play an important role in low-temperature plasmas such as Earth’s upper atmosphere or the interstellar medium [1,2]. A sensitive tool for studying the interactions between the valence and the core electrons is inner-shell ionization of negative ions [3]. The inner-shell photoionization dynamics is particularly rich since it is governed by strong multiple relaxation effects of the valence electrons upon creation of the inner-shell hole [4,5].
Here, we report on preliminary results from a recent beam time at the Photon-Ion-Spectrometer at beamline P04 at PETRA III (PIPE) [6]. We investigated multiple photodetachment of silicon anions which led to final charge states up to Si5+. Relative cross sections for all measured product ion channels will be presented and discussed.
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[2] T. J. Millar et al., Chem. Rev. 117, 1765 (2017)
[3] S. Schippers et al., Phys. Rev. A 94 041401(R) (2016)
[4] T. Gorczyca, Rad. Phys. Chem. 70, 407 (2004)
[5] S. Schippers et al., Phys. Rev. A 94, 041401 (R) (2016)
[6] S. Schippers et al., J. Phys. B 47, 115602 (2014)