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MO: Fachverband Molekülphysik
MO 19: MO Poster 4
MO 19.11: Poster
Donnerstag, 12. März 2020, 17:00–19:00, Empore Lichthof
Understanding the Geometric and Optical Properties of Cationic Silicon Carbide Clusters — •Robert Radloff, Lars Dahllöf, Kai Pollow, Karim Ahmed Saroukh, Marko Förstel, and Otto Dopfer — Technische Universität Berlin, Institut für Optik und Atomare Physik, Germany
Silicon carbide (SiC) possesses a unique set of properties that make it a suitable material for high-temperature electronics applications: a wide bandgap, high thermal stability, chemical inertness and high thermal conductivity [1]. Additionally, small SiC molecules like SiC [2], Si2C [3], etc. as well as SiC dust grains [4] have been observed in the circumstellar environment of carbon-rich stars.
We present the energetic, geometric, and optical properties of small cationic SiC clusters obtained via photodissociation spectroscopy, mass spectrometry, and quantum chemical calculations. We show the first optical spectrum of a SiC cation and present hitherto unreported fragmentation channels and ground state geometries of some cationic SiC clusters.
[1] J. B. Casady and R. W. Johnson, Solid State Electron, 39 (10), 1409-1422 (1996)
[2] J. Cernicharo et al., Astrophys. J. Lett. 341, L25 (1989)
[3] J. Cernicharo et al., Astrophys. J. Lett. 806, L3 (2015)
[4] R. Treffers and M. Cohen, Astrophys. J. 188, 545-552 (1974)