Dortmund 2021 – wissenschaftliches Programm
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T: Fachverband Teilchenphysik
T 60: Silicon Strip Detectors I
T 60.3: Vortrag
Mittwoch, 17. März 2021, 16:30–16:45, Tj
Charge collection measurements of passive CMOS strip sensors — Marta Baselga1, Leena Diehl2, Ingrid-Maria Gregor1,3, Tomasz Hemperek3, Jan Cedric Hönig2, Ulrich Parzefall2, •Arturo Rodriguez2, Surabhi Sharma1, Dennis Sperlich2, Tianyang Wang3, and Liv Wiik-Fuchs1 — 1Deutsches Elektronen-Synchrotron DESY, Hamburg, Germany — 2Physikalisches Institut Albert-Ludwigs-Universität Freiburg, Freiburg im Breisgrau, Germany — 3Universität Bonn, Bonn, Germany
An increasing trend towards full silicon trackers in future high energy physics experiments provokes the need to cover increasingly large areas with silicon detectors. As a consequence, detector designs that utilize cost-effective production processes are becoming more critical. Employing CMOS production lines for strip sensors allow large and high-resistive wafers at low cost, making them a prime candidate for future large scale silicon trackers. The present contribution presents the first laboratory charge collection measurements using a beta source of novel passive unirradiated CMOS silicon strip sensors developed within the market survey for phase two upgrade of the ATLAS detector. The study contains three different strip flavors fabricated by LFoundry on a 150 µm thick wafer with a passive CMOS 150 nm process. The strip sensors have a length of up to 4 cm, formed by the stitching of individual elements. A primary focus was position-dependent measurements to understand the impact of stitching on the functionality of the sensors.