SKM 2021 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 13: Poster Session III
HL 13.14: Poster
Tuesday, September 28, 2021, 13:30–16:30, P
Top-down fabrication of silicon nanophotonic structures for hosting single-photon emitters — •Nagesh S. Jagtap1,2, Michael Hollenbach1,2, Ciaran Fowley1, Woo Lee3, Manfred Helm1,2, Georgy V. Astakhov1, Artur Erbe1, and Yonder Berencén1 — 1Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany — 2Technische Universität Dresden, 01062 Dresden, Germany — 3Korea Research Institute of Standards and Science (KRISS), Yuseong, 305-340 Daejeon, Republic of Korea
Silicon, the ubiquitous material for computer chips, has recently been shown to be instrumental for hosting sources of single-photons emitting in the strategic optical telecommunication O-band (1260-1360 nm)[1], the so-called G center. To increase the brightness and the photon extraction efficiency of single G center, the coupling of these centers into photonic structures is strong.
This work presents a top-down approach avoiding the use of ion beam-based etching methods for fabricating high-quality defect-free photonic structures such as silicon nanopillars, which can host single-photon emitters. This method builds upon a wet-chemical process known as metal-assisted chemical etching. We report the successful fabrication of two-dimensional arrays of vertically-directed waveguiding silicon nanopillars. We also show the etch chemistry dependence on the Si wafer resistivity along with its effect on the etch rate and the sidewall roughness of pillars for a variety of pillar diameters.
References:[1] M. Hollenbach, et al. Opt. Express 28,26111-26121