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HL: Fachverband Halbleiterphysik
HL 13: Poster Session III
HL 13.18: Poster
Tuesday, September 28, 2021, 13:30–16:30, P
Light-sensitive Resonant Tunneling Diodes for single photon detection — •Sebastian Krüger1, Andreas Pfenning2, Fabian Hartmann1, Fauzia Jabeen1, and Sven Höfling1 — 1Technische Physik, Julius-Maximilians Universität Würzburg, Am Hubland, 97074 Würzburg, Germany — 2Stewart Blusson Quantum Matter Institute, University of British Columbia, Vancouver, British Columbia, Canada V6T 1Z4
Double barrier resonant tunneling diodes (RTDs) are versatile optoelectronic devices with a multitude of possible applications. The focus of interest is the application for terahertz oscillation and the detection of single photons. Especially the downtime-free photodetection has an advantage compared to the state-of-the-art techniques, which are using avalanche multiplication. The capability of single-photon detection has been demonstrated in [1]. The low efficiency of around 10% is limiting. We present our work on RTD photodetectors based on AlGaAs/GaAs DBQW with GaAsSb quantum well (QW) close to the double barrier structure [2]. The strained ternary alloy, GaAsSb, is grown on GaAs. The type II band alignment leads to better *hole* confinement compared to InGaAs-QW or quantum dots (QD). The photodetection based on minority charge carrier accumulation at the DBS in RTDs, is sensed by the influence of their electrostatic potential. It leads to an additional voltage drop over the DBS and shifts the I(V) characteristics towards lower voltages [2]. [1] J. C. Blakesley, et al., Physical Review Letters 94, 067401 (2005). [2] A.Pfenning, et al., Applied Physics Letters 107, 081104 (2015).