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HL: Fachverband Halbleiterphysik
HL 13: Poster Session III
HL 13.19: Poster
Tuesday, September 28, 2021, 13:30–16:30, P
Towards Scalable Reconfigurable Electronics: Fabrication of Schottky Barrier Field-Effect Transistors using Flash Lamp Annealing — •Muhammad Bilal Khan, Sayantan Ghosh, Slawomir Prucnal, Rene Hübner, Artur Erbe, and Yordan M. Georgiev — Institute of Ion Beam Physics And Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden
To complement the scaling down of complementary metal-oxide-semiconductor (CMOS), new device concepts have been introduced. One such concept is the reconfigurable field-effect transistor (RFET). In the most general case, an RFET is a silicon nanowire (SiNW) based device. The SiNW is silicided at both ends, which results in silicide-Si-silicide Schottky junctions. Typically, two distinct gate electrodes are placed on silicide-Si junctions. By controlling the electrostatic potential on the gate electrodes, the RFET is programmed to the p- or n- polarity. We report on the fabrication and electrical characterization of top-down fabricated SiNW based RFETs. Flash lamp annealing based silicidation process is developed, which enables control over the silicidation process. Uni-polar transfer characteristics are obtained using two top-gates. The effect of implementing various gate dielectric materials (SiO2, Al2O3 and hBN) is studied to enhance device electrostatics.