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HL: Fachverband Halbleiterphysik

HL 13: Poster Session III

HL 13.27: Poster

Dienstag, 28. September 2021, 13:30–16:30, P

CMOS back-end compatible Metal-Hf_0.5Zr_0.5O₂-Al₂O₃-Metal ferroelectric tunnel junction devices for neuromorphic applications — •Keerthana Nair^1,2, Marco Holzer^1,2, Sourish Banerjee¹, Catherine Dudourdieu^1,2, and Veeresh Deshpande¹ — ¹Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin, Germany — ²Freie Universität Berlin, Physical Chemistry, Arnimallee 22, 14195 Berlin, Germany

Hf_0.5Zr_0.5O₂ (HZO) ferroelectric layer provides an opportunity for CMOS back-end-of-line integrable devices owing to low crystallization temperature (around 400^∘C). Ferroelectric tunnel junction (FTJ) memory devices based on HZO feature ultra-low power consumption and have potential for multiple resistance states necessary for neuromorphic applications. FTJ architecture based on the Metal-Ferroelectric-Dielectric-Metal stack allows high ON/OFF ratio with thicker ferroelectric layer ( 10-12nm). In this work, we demonstrate 400^∘C-crystallized Metal-HZO-Al₂O₃-Metal FTJ architecture with TiN and W metals. Utilizing the coercive field distribution of the domains, we demonstrate multiple resistance states through partial switching operations and switching pulse-width modulations. The influence of cycling waveform on the ON/OFF ratio (which directly impacts achievable multiple resistance states) will be discussed. The intermediate resistance state stability will also be discussed. Our study also investigates the role of the process conditions, dielectric thickness and metal placement on attaining high ON/OFF ratio back-end compatible FTJ devices.