SKM 2021 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 19: Poster Session IV
HL 19.21: Poster
Donnerstag, 30. September 2021, 13:30–16:30, P
Effect of hydrogen in low temperature GaN underlayer on the effective carrier lifetime in GaInN/GaN single quantum wells — •Rodrigo De Vasconcellos Lourenço1,2, Philipp Henning1,2, Samar Hagag1,2, Uwe Rossow1, Heiko Bremers1,2, and Andreas Hangleiter1,2 — 1Institute of Applied Physics, Technische Universität Braunschweig, Germany — 2Laboratory for Emerging Nanometrology, Braunschweig, Germany
The luminescence efficiency of GaInN single quantum well (SQW) structures is affected by the growth conditions of all the layers grown before it and especially those ones directly before the quantum well - the so-called underlayer (UL). Usually, nitrogen is used as carrier gas during low temperature UL growth in low-pressure MOVPE. In this work, molecular hydrogen was added to the carrier gas during pure GaN UL growth and its supply was closed well before the QW is grown. Time-resolved photoluminescence measurements of SQWs with UL containing hydrogen and intentional Si doping suggest that they have better internal quantum efficiency at low temperature compared to the reference sample. Additionally, those showed longer radiative lifetime and longer emission wavelengths at low temperature compared to SQWs with doped UL and without hydrogen. This may indicate that hydrogen reduces the free carriers density by partly compensating the Si doping. Comparing SQWs with UL not intentionally doped, the one containing hydrogen showed shorter effective lifetime at low temperature, which could suggest that hydrogen acts as a donor or that hydrogen induces non-radiative centers.