SKM 2021 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 8: Poster Session II

HL 8.3: Poster

Dienstag, 28. September 2021, 10:00–13:00, P

Focused ion beam implantation of rare-earth ions in semiconductor nanostructures — •Christian Düputell, Arne Ludwig, and Andreas D. Wieck — Chair of Applied Solid State Physics, Ruhr University, Bochum

We report on focused ion beam (FIB) implantation of rare-earth ions in semiconductor nanostructures. Semiconductor nanostructures have attracted a lot of attention due to their unique optical, electrical and mechanical properties. To use nanostructures for a certain purpose, often very specific properties have to be achieved. An elegant method to tune the electrical and optical properties of semiconductor nanostructures is focused ion beam implantation. Using ion beams offers high-resolution lateral engineering, local band gap modulation due to ion-induced intermixing as well as local doping applications and even isotopic resolution. To carry out implantation of rare-earth ions in semiconductor nanostructures, we especially focus on the incorporation of erbium ions into GaAs. Erbium shows two unique properties. First, it has a huge magnetic moment, which could lead to a rich spectrum of possible spin coupling processes in the host material. And second, the optical transitions of erbium should lead to an emission of electromagnetic radiation at the important telecom-C-band wavelength of 1.54 µm, which has minimal absorption in glass fibres. We are presenting the current status of our studies on both of these properties as a function of the implantation pattern, the ion fluence and the used annealing parameters. We also report on the preparation and composition of the corresponding liquid metal alloy sources for FIB.