SKM 2021 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 8: Poster Session II

HL 8.31: Poster

Dienstag, 28. September 2021, 10:00–13:00, P

Influence of group III dopants on the properties of SnO(001) films grown via plasma-assisted molecular beam epitaxy — •Kingsley Egbo, Georg Hoffmann, Andrea Ardenghi, Alexandra Papadogianni, Jonas Laehnemann, and Oliver Bierwagen — Paul-Drude-Institut für Festkörperelektronik, 10117 Berlin, Germany

Most metal oxides show a propensity for n-type conductivity, few oxides show p-type character. Metastable tin monoxide (SnO) is among the few p-type oxide semiconductors and its unintentional p-type conductivity is believed to be controlled by Sn-vacancies. Few studies have also suggested the possibility for bipolar doping in SnO. In this study, the growth of SnO(001) doped with the group III La, In and Ga on YSZ(100) substrates by plasma-assisted MBE is investigated. Structural properties of the doped SnO(001) films were studied by x-ray diffraction, Raman spectroscopy and scanning electron microscope. Detailed electrical properties of the doped films are obtained from Hall Effect measurements. Hole concentration, p of ~0.8-2.0 x 1019 cm-3 and resistivity, ρ of 0.15-0.30 Ω-cm respectively is obtained from room temperature hall measurement of unintentionally doped SnO (001). We find that p increases to ~ 4.0-5.0 x 1019 cm-3 and ρ decreased to 0.04-0.063 Ω-cm for Ga doped films. In contrast, thin films doped with In and La show reduction in p and remarkable increase in ρ with increasing dopant concentration. Our results reveal that p-type conductivity in SnO can be improved by Ga acceptors while La and In likely acts as compensating donors in SnO. These results offer an opportunity for exploring bipolar doping in SnO.