SKM 2021 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 8: Poster Session II
HL 8.33: Poster
Dienstag, 28. September 2021, 10:00–13:00, P
Doping of β-Ga2O3 in a plasma assisted MBE using a SiO source. — •Andrea Ardenghi1, Georg Hoffmann1, Oliver Bierwagen1, Piero Mazzolini2, Andreas Falkenstein3, and Manfred Martin3 — 1Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany — 2Department of Mathematical, Physical and Computer Sciences, Parma University, Italy — 3Institute of Physical Chemistry, RWTH Aachen University, Aachen, Germany
β-Ga2O3 is the most likely candidate for the next generation of power electronic devices but, achieve high quality doped sample is still challenging. To obtain n-doping for Ga2O3 the main candidate are Sn, Ge and Si. Between them Si-doped samples showed the higher mobility, making Si the most interesting doping source. Using a silicon source as dopant in PAMBE can be difficult since, due to the oxygen plasma, the source will be oxidized. In Kalarickal work[1], the flux from the Si source were highly influenced by the oxygen pressure, due to the formation and desorption of SiO. In order to avoid this problem a study similar to the one reported by Hoffmann et al[2]. was carried on a SiO source. Another advantage of the SiO source is the low cell temperature in comparison with Si and SiO2. From our results temperatures between 600-800∘C should give us doping concentration in the range of 10e17 to 10e20 cm-3. The SiO source will be used for the growth of Si-doped Ga2O3 layers by PAMBE and the results will be reported.
[1]Kalarickal, Nidhin Kurian, et al. Applied Physics Letters 115.15 (2019).
[2]Hoffmann, Georg, et al. APL Materials 8.3 (2020).