SKM 2021 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 9: Nitride: Preparation, Charakterization and Devices
HL 9.1: Vortrag
Dienstag, 28. September 2021, 11:45–12:00, H4
AlPN on GaN: A new barrier material for HEMTs — •Markus Pristovsek and Yuto Ando — IMaSS, Nagoya University, Japan
We report on the ternary alloy wurzite AlPyN1-y on (0001) GaN, grown by metal-organic vapor phase epitaxy. AlPN is lattice matched to GaN at about 11% P content, while having a larger bandgap than AlInN. Furthermore, AlPN is grown in H2 at similar temperatures as GaN, avoiding long growth interruptions and temperature ramping. Unlike AlInN, Ga carry over is not an isssue. Finally, there is tertiary-butylphosphine (tBP), a proven metal-organic precursor with a high vapor pressure which is not available for AlScN. Therefore, AlPN looks like a promising material to replace AlGaN as barrier layer in high electron mobility transistors (HEMT) especially for high frequency applications. First results confirmed high sheet carrier densities, and highlighted the crucial influence of strain to avoid point defects. As with any new material there are new challenges, most notably the growth transitions between the binary GaN and the group V alloy AlPN and avoiding detrimental effects on growth and background doping from residual P in GaN.