SKM 2021 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 9: Nitride: Preparation, Charakterization and Devices
HL 9.2: Vortrag
Dienstag, 28. September 2021, 12:00–12:15, H4
Low-temperature internal quantum efficiency of GaInN/GaN quantum wells under steady state conditions — •Shawutijiang Sidikejiang1, Philipp Henning1,2, Philipp Horenburg1, Heiko Bremers1,2, Uwe Rossow1, Dirk Menzel3, and Andreas Hangleiter1,2 — 1Institut für Angewandte Physik, Technische Universität Braunschweig — 2Laboratory for Emerging Nanometrology, Technische Universität Braunschweig — 3Institut für Physik der Kondensierten Materie, Technische Universität Braunschweig
In this work, we compared the low-temperature PL intensities of a range of QW samples under identical conditions, mounting the samples side by side. Normalizing the measured intensity to the absorbed power density in the QWs, we find that the PL efficiencies of several samples, which the 100% internal quantum efficiency (IQE) can be confirmed by the temperature-dependent lifetime measurements from time-resolved PL (TRPL), are identical under steady-state PL excitation. On the other hand, for samples with a reduced low-temperature IQE observed in TRPL, the PL efficiencies saturate at significantly lower values. The experimental results confirm a unity IQE at low temperature for those efficient samples, but also allow to estimate the absolute IQE of samples with a lower efficiency by a direct comparison. The latter case is investigated by studying the influence of point defects due to Ar implantation on the low-temperature PL efficiency of the QWs.