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KFM: Fachverband Kristalline Festkörper und deren Mikrostruktur

KFM 1: Focus Session I: Ferroics - Domains and Domain Walls

KFM 1.8: Vortrag

Dienstag, 28. September 2021, 12:30–12:45, H2

Defeating depolarizing fields with artificial flux closure inultrathin ferroelectrics — •Elzbieta Gradauskaite¹, Natascha Gray¹, Quintin N. Meier², Marco Campanini³, Thomas Moran⁴, Bryan D. Huey⁴, Marta D. Rossell³, Manfred Fiebig¹, and Morgan Trassin¹ — ¹Department of Materials, ETH Zurich, Switzerland — ²CEA Grenoble, LITEN, Grenoble, France — ³Electron Microscopy Center, Empa, Switzerland — ⁴Department of Materials Science and Engineering, University of Connecticut, Storrs, USA

Material surfaces encompass structural and chemical discontinuities that often lead to the loss of the property of interest in the so-called “dead layers”. It is notably problematic in nanoscale oxide electronics, where the integration of ferroic materials into devices is obstructed by the thickness threshold required for the emergence of their functionality. Here, we report the stabilization of ultrathin out-of-plane ferroelectricity in oxide heterostructures through the design of an artificial flux-closure-like architecture. Inserting an in-plane polarized Aurivillius epitaxial buffer provides continuity of polarization at the interface, and despite its insulating nature we observe the emergence of polarization in our out-of-plane-polarized model ferroelectric BaTiO3 from the very first unit cell. Our model heterostructure futher enables the stabilization of charged domain walls with pronounced chiral textures in multiferroic BiFeO3 films. Thus, we show that the smart integration of insulating materials can surpass standard metals in the design of the next generation ferroelectric-based oxide electronics.