Parts | Days | Selection | Search | Updates | Downloads | Help

MA: Fachverband Magnetismus

MA 11: Posters Magnetism III

MA 11.27: Poster

Wednesday, September 29, 2021, 13:30–16:30, P

First principles design of Ohmic spin diodes based on quaternary Heusler compounds — •Thorsten Aull, Ersoy Sasioglu, and Ingrid Mertig — Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, 06099 Halle (Saale) Germany

The Ohmic spin diode is a new concept in spintronics whose operation principle relies on the transport properties of spin-gapless semiconductors (SGSs) and half-metallic magnets (HMMs). [1] Due to the spin-dependent filtering of electrons Ohmic spin diodes exhibit linear current-voltage characteristics in the on-state and zero threshold voltage due to the absence of an energy barrier at the interface between the SGS and HMM electrode. Quaternary Heusler compounds offer a platform to design SGSs and HMMs within the same family and these materials possess high Curie temperatures which makes them favorable for room temperature applications. By applying first-principles DFT calculations combined with the non-equilibriums Green’s function method we design four different OSDs using quaternary Heusler compounds. [2] We demonstrate that these diodes exhibit zero threshold voltage and possess linear current-voltage characteristics. Moreover, we reveal that the small leakage currents can be attributed to the overlap of the conduction and valance band edges in opposite spin channels at the Fermi energy in the SGS material.
[1] E. Şaşioğlu et al., Phys. Rev. Appl. 14, 014082 (2020)
[2] T. Aull et al., Appl. Phys. Lett. 118, 052405 (2021)