SurfaceScience21 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 105: Poster Session VIII: Graphene and beyond II
O 105.9: Poster
Donnerstag, 4. März 2021, 13:30–15:30, P
Moiré-driven charge accumulation in few-layer antimony films on InSb(111)A — Bing Liu1,3, •Tim Wagner1,3, Martin Kamp1,3, Stefan Enzner2,3, Philipp Eck2,3, Giorgio Sangiovanni2,3, and Ralph Claessen1,3 — 1Physikalisches Institut, Universität Würzburg, D-97074 Würzburg, Germany — 2Institut für Theoretische Physik und Astrophysik, Universität Würzburg, D-97074 Würzburg, Germany — 3Würzburg-Dresden Cluster of Excellence ct.qmat, Universität Würzburg, D-97074 Würzburg, Germany
Few-layer antimony films are a promising topological material which has been widely investigated on various substrates. Here we show few-layer films which have been successfully synthesized on a InSb(111)A substrate. The epitaxially grown antimony layers keep the bulk Sb lattice constant, i.e., do not adapt to that of the substrate. According to density functional theory calculations considering this Moiré situation in a simplified unit cell, the lattice mismatch at the interface gives rise to charge accumulations at positions where the atoms of film and substrate are in phase. Although situated at the interface, these charge localizations are predicted to extend perpendicular to the interface over several antimony layers. Experimentally, this can be confirmed in scanning tunneling microscopy with a Moiré pattern visible up to the seventh layer. Spectroscopy measurements of antimony films with various thicknesses show Sb bulk behavior, i.e., the scattering of the topological surface state, down to five film layers. At lower thicknesses, this scattering is suppressed, which may be attributed to the increased influence of the Moiré-driven charge accumulations at the interface.