SurfaceScience21 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 46: Poster Session IV: Semiconductor substrates II
O 46.2: Poster
Dienstag, 2. März 2021, 13:30–15:30, P
3D Active Sites of Te in Hyperdoped Si by Hard X-ray Photoelectron Kikuchi-Diffraction — •Moritz Hoesch1, Mao Wang2, Shengqiang Zhou2, Christoph Schlüter1, Olena Fedchenko3, Katerina Medjanik3, Sergej Babenkov3, Aimo Winkelmann4, Hans-Joachim Elmers3, and Gerd Schönhense3 — 1DESY Photon Science, Notkestraße 85, Hamburg, Germany — 2Helmholt-Zentrum Dresden-Rossendorf, — 3JGU, Institut für Physik, Mainz, Germany — 4Academic Centre for Materials and Nanotechnology, AGH University of Science and Technology, Krakow, Poland
n-type doping of Si by the deep chalcogen donor Te in excess of the solubility limit was recently demonstrated to lead to hyperdoped material [1]. These samples are made by ion im*plantation into an intrinsic Si substrate combined with pulsed laser melting. Our investigation by hard x-ray photoelectron spectroscopy (hXPS) reveals at least two different Te species with different binding energy and systematically varying concentrations as a function of increasing Te-content. At the highest doping concentration we study the photoelectron scattering patterns using hard x-ray photoelectron diffraction (hXPD) [2]. Substitutional site occupation of both Te monomers as well as dimers is identified with increasing binding energy leading to the main features in the XPS spectra. The sharp hXPD patterns allow the detailed analysis of the local surrounding of the dopant atoms [3]. --- References: [1] M. Wang et al. Phys. Rev. Appl. 11 054039 (2019) and references therein. [2] O. Fedchenko et al NJP 21, 113031 (2019); [3] O. Fedchenko et al NJP 22, 103002 (2020).