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O: Fachverband Oberflächenphysik

O 78: Poster Session VI: 2D Materials: Electronic structure, excitations, etc. II

O 78.14: Poster

Wednesday, March 3, 2021, 13:30–15:30, P

Kelvin probe force microscopy-based direct measurements of contact resistance in 2D semiconductor thin film transistor — •Aleksandar Matković1, Andreas Petritz2, Gerburg Schider2, Markus Krammer3, Markus Kratzer1, Esther Karner-Petritz2, Alexander Fian2, Herbert Gold2, Michael Gärtner4, Andreas Terfort4, Christian Teichert1, Egbert Zojer3, Karin Zojer3, and Barbara Stadlober21Institute of Physics, Montanuniversität Leoben, Leoben, Austria — 2Joanneum Research MATERIALS, Weiz, Austria — 3Institute of Solid State Physics, NAWI Graz, Graz University of Technology, Graz, Austria — 4Institut für Anorganische und Analytische Chemie, Goethe-University Frankfurt, Germany

This study aims at direct imaging of contact resistance in MoS2-based thin film transistors (TFTs). Exfoliated single-crystal flakes of MoS2 have been used in a bottom-contact TFT configuration. Pyrimidine-containing self-assembled monolayers (SAMs) were employed to tune the work function of gold electrodes. Kelvin probe force microscopy measurements were carried out during operation of the devices in order to directly image potential drops across the channel and to study the influence of different SAM treatments on the contact resistance. By independently imaging potential drops at both carrier injection and extraction points, we demonstrate asymmetry of contact resistances in MoS2-based TFTs, as well as their non-linear and bias-dependent behavior [10.1002/aelm.202000110].

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