Regensburg 2022 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 22: Heterostructures, Interfaces and Surfaces
HL 22.2: Talk
Wednesday, September 7, 2022, 15:15–15:30, H33
Reconfigurable Complementary and Combinational Logic based on Monolithic and Single-Crystalline Al-Si Heterostructures — •Raphael Böckle1, Masiar Sistani1, Martina Bažíková1, Lukas Wind1, Zahra Sadre-Momtaz2, Martien I. den Hertog2, Corban G.E. Murphey3, James F. Cahoon3, and Walter M. Weber1 — 1Institute of Solide State Electronics, TU Wien, Vienna, Austria — 2Institut Néel, CNRS, Grenoble, France — 3Department of Chemistry, University of North Carolina, Chapel Hill, North Carolina, United States
Overcoming the difficulty in reproducibility and deterministically defining the metal phase of metal-Si heterostructures is among the key prerequisites to enable next-generation nanoelectronic devices. Here, the formation of monolithic Al-Si-Al heterostructures obtained from Si nanowires and Al contacts is presented. Transmission electron microscopy and energy-dispersive X-ray spectroscopy confirmed both the composition and crystalline nature of the presented Al-Si-Al heterostructures, with no intermetallic phases formed during the exchange process in contrast to state-of-the-art metal silicides. In this context, reconfigurable field-effect transistors (RFET), capable of dynamically altering the operation mode between n- or p-type are realized. Having devised symmetric on-currents as well as threshold voltages for n- and p-type operation as a necessary requirement to exploit complementary reconfigurable circuits, selected implementations of logic gates such as inverters and combinational wired-AND gates are built from single elementary RFETs.