Regensburg 2022 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 25: Poster 1
HL 25.19: Poster
Mittwoch, 7. September 2022, 18:00–20:00, P2
Contact engineering of black phosphorus field-effect transistors — •Yagnika Vekariya1, Phanish Chava1, Zahra Fekri1, Kenji Watanabe3, Takashi Taniguchi3, Sibylle Gemming2, and Artur Erbe1 — 1Helmholtz Zentrum Dresden Rossendorf, 01328 Dresden, Germany — 2Technische Universität Chemnitz, 09126 Chemnitz, Germany — 3National Institute for Materials Science, Tsukuba 305-0044, Japan
Black phosphorus (BP) has recently emerged as new semiconducting two-dimensional (2D) material because of its unique properties such as tunable direct bandgap, high field-effect mobility, and good on/off ratio. In this work, we fabricated and characterized field-effect transistors (FETs) based on a few layers of black phosphorus, in order to evaluate the performance of devices using different contact materials like Graphene, Nickel (Ni), Titanium (Ti), and Chromium (Cr). We observed that the polarity and mobility value of transistors strongly depend on the contact material.