Regensburg 2022 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 25: Poster 1

HL 25.20: Poster

Mittwoch, 7. September 2022, 18:00–20:00, P2

Single photon emitters study in hBN via low power implantation approach — •Renu Rani1, Minh Bui1,2, Bilal Malik1,2, Manuel Auge3, Thorsten Brazda1, Hans Hofsäss3, Detlev Grützmacher1,2, and Beata Kardynał1,21Peter Grünberg Institut-9, Forschungszentrum Jülich, Jülich — 2Department of Physics, RWTH Aachen, Aachen — 3II. Physikalisches Institut, Georg-August-Universität Göttingen

A discovery of quantum emitters in hexagonal boron nitride (hBN) has recently incited immense interest in the field of quantum technologies. It offers not only a platform for fundamental science but is of interest for applications in quantum photonics owing to its robust single photon emission at room temperature. Recent studies have suggested that these SPEs are associated with intrinsic defects, which led to efforts to engineer the SPE in hBN by various such as plasma treatment, annealing, laser, e-beam and ion irradiation methods. Despite these efforts, the origin of single photon emission and the correlation of emission with particular defects still need to be scrutinized. Here we propose to use low-energy ion implantation to introduce the different defects in hBN. We will show results of optical characterization of hBN implanted with various noble gas ions with different energies, which depending on their atomic mass generate different vacancies and at different depths. We will discuss the viability of creating localized emitters throughout the surface, not only edges or grain boundaries. We will use Raman spectra to show that implanted material is free of contamination and damage associated with energetic particle beams.

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