# Regensburg 2022 – wissenschaftliches Programm

## Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

# HL: Fachverband Halbleiterphysik

## HL 25: Poster 1

### HL 25.21: Poster

### Mittwoch, 7. September 2022, 18:00–20:00, P2

Twist angle dependent proximity induced spin-orbit coupling in graphene/WSe_{2}/hBN heterostructures — •Tobias Rockinger^{1}, Antony George^{2}, Andrey Turchanin^{2}, Ziyang Gan^{2}, Kenji Watanabe^{3}, Takashi Taniguchi^{3}, Dieter Weiss^{1}, and Jonathan Eroms^{1} — ^{1}University of Regensburg, DE-93040 Regensburg, Germany — ^{2}Friedrich-Schiller-Universität, DE-07743 Jena , Germany — ^{3}NIMS, Tsukuba 305-0044, Japan

Recently, theoretical calculations predicted a strong dependence of the proximity-induced SOC on the twist angle between SLG and TMDCs [1]. To prove this, we fabricated SLG/WSe_{2}/hBN heterostructures with well-defined twist angles between the SLG and WSe_{2} layers in two ways. For the first type, we exfoliated SLG and WSe_{2} which often break along zigzag or armchair edges [2]. This was used to align and estimate the rotation angles between the flakes (zigzag/armchair edges not distinguishable). For the other type of samples, we used CVD-grown WSe_{2} on anisotropically etched SLG to align and determine the twist angles exactly (zigzag/armchair edges distinguishable) [3]. Strong SOC causes weak anti-localization, which we used to determine the strength of the Rasbha type SOC (λ_{R}) and the valley-Zeeman type SOC (λ_{VZ}). We found that samples with an angle around 15^{∘} or 22^{∘} show a much stronger SOC in both cases, for λ_{R} as well as for λ_{VZ}, compared to samples, with twist angles around 0^{∘}/30^{∘} or 11^{∘}. This is in qualitative agreement with theoretical predictions [1]. [1]Y. Li and M. Koshino, Phys. Rev. B 99, (2019) 075438; [2]Y. Guo et al., ACS Nano 10, (2016) 8980; [3]P. Incze et al., Nano Res 3, (2010) 110