Regensburg 2022 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 25: Poster 1
HL 25.33: Poster
Mittwoch, 7. September 2022, 18:00–20:00, P2
Phonon Transport in Thin Homoepitaxial β-Ga2O3 Films — •Robin Ahrling1, Olivio Chiatti1, Rüdiger Mitdank1, Zbigniew Galazka2, Andreas Popp2, and Saskia F. Fischer1 — 1Novel Materials Group, Humboldt-Universität zu Berlin, 10099 Berlin, Germany — 2Leibniz Institute for Crystal Growth, 12489 Berlin, Germany
As a wide-band gap semiconductor with a high breakthrough field, gallium oxide (Ga2O3) has shown to be a promising material for applications in high power electronics. However, due to the materials low thermal conductivity [1,2] heat dissipation is a challenge for future device applications. By photolithography, magnetron sputtering and subsequent liftoff we prepare structures for investigating the thermal transport in the bulk Ga2O3 substrate and the thin homoepitaxial β-Ga2O3 films by applying the 2-ω and 3-ω measurement techniques.
For the substrate, we observe a dominance of phonon-phonon Umklapp scattering for high temperatures (>90 K) and a combination of point defect scattering and boundary effects for low temperatures. The phonon mean free path reaches a limit for low temperatures that can be explained with the crystal thickness. We aim to investigate the thermal transport exclusively in the thin films by producing sub-µm heater widths using electron beam lithography and performing measurements at higher frequencies.
 M. Handwerg et al., Semicond. Sci. Technol. 30, (2015) 024006
 M. Handwerg et al., Semicond. Sci. Technol. 31, (2016) 125006