Regensburg 2022 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 25: Poster 1

HL 25.57: Poster

Mittwoch, 7. September 2022, 18:00–20:00, P2

Telecom wavelength InP based quantum dots: Growth and characterization — •Ranbir Kaur, Mohanad Alkaales, Johann Peter Reithmaier, and Mohamed Benyoucef — Institute of Nanostructure Technologies and Analytics, University of Kassel, Kassel, Germany

InP-based semiconductor quantum dots (QDs) represent an attractive light source for quantum communication applications due to their ability to emit photons at the telecom C-band. Self-assembled low-density QDs can be realized by careful control of the growth conditions. Here, we investigate the effect of different growth parameters to optimize telecom wavelengths

InP-based QD structures using molecular beam epitaxy with controlled properties in photonic and pin-diode structures. The QDs structures with and without doping were grown on distributed Bragg reflectors to enhance the light emission. Using proper doping levels, high-quality QDs can be embedded in pin-diode structures. Low-temperature *-PL measurements show bright single QD emission around 1.55 *m with narrow linewidth and low fine-structure splitting. Furthermore, studies related to doped QD structures and fabrication of pin-diode structures emitting at telecom wavelength are presented.

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