Regensburg 2022 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 30: Poster 2
HL 30.22: Poster
Donnerstag, 8. September 2022, 11:00–13:00, P3
Indium oxide metal-semiconductor field-effect transistors — •Fabian Schöppach, Holger von Wenckstern, and Marius Grundmann — Felix Bloch Institute for Solid State Physics, Universität Leipzig, Germany
Indium oxide (In2O3) combines promising physical properties such as high carrier mobility and transparency in the visible. However, In2O3 is generally challenging to use in active devices. This is mainly due to its tendency to form an electron accumulation layer on its surface (SEAL) which is reported to be caused by surface near oxygen vacancies [1]. Both, compensating Mg doping and oxygen plasma treatment can be used to suppress the SEAL formation [2,3]. Moreover, as a sesquioxide, In2O3 is a very robust material that resists classical patterning processes and cannot be patterned by wet chemical processes.
In this work, In2O3 films grown by pulsed laser deposition are structured via dry-etching techniques. With that field-effect transistors were fabricated for the first time, reaching on-off ratios of over 5 orders of magnitude and low sub-threshold swings of about 110 mV/dec. For the source and drain contacts, gold was deposited by inert ambient sputtering. Schottky gate diodes were fabricated in a reactive sputtering process, which is a prerequisite for obtaining electrically rectifying contacts to In2O3 [4].
[1] King, et al. Physical Review B 80.8, 081201 (2009)
[2] Schmidt, et al. physica status solidi (b) 252.10, 2304–2308 (2015)
[3] Michel, et al. ACS Appl. Mater. Interf. 11, 27073–27087 (2019)
[4] von Wenckstern, et al. APL Materials 2.4, 046104 (2014)