Regensburg 2022 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 30: Poster 2

HL 30.23: Poster

Thursday, September 8, 2022, 11:00–13:00, P3

Electrical transport properties of Sn, Si and Ge doped α−Ga2O3 — •Thorben Slotosch, Clemens Petersen, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Felix Bloch Institute for Solid State Physics, Semiconductor Physics Group, Leipzig, Germany

We present Schottky barrier diodes based on PLD-grown α −Ga₂O₃ thin films, doped with the effective mass donors Sn, Si and Ge. By employing temperature dependent current-voltage measurements, Hall-effect measurements and thermal admittance spectroscopy of the space charge region we investigate the electric transport properties of α −Ga₂O₃ in relation to the doping levels provided by the combinatorial PLD method.
Materials with large bandgaps (>3.4 eV) have attracted scientist’s interest more and recently. With it’s high bandgap of 4.6-5.3 eV Ga₂O₃ is well suited for appilcations in high-power devices [1]. Numerous studies have already reported on the thermodynamically stable monoclinic β −phase of gallium oxide. However the metastable α −polymorph has gained scientist’s attention. It’s corundum structure allows α −Ga₂O₃ to form alloys with other corundum-structured materials like α −Al₂O₃ over the whole composition range to tune the bandgap energy up to 8.75 eV [2]. In order to grow α −Ga₂O₃ combinatorial pulsed laser deposition can be employed, which offers the advantage of a precise dopant incorporation and lateral continuous doping gradients [3].
[1] M. Higashiwaki, apl, 013504, 2012. [2] A.Hassa, pss-b, 2000394, 2020. [3] H. v. Wenckstern, pss-b, 1900626, 2020.