Regensburg 2022 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 42: 2D Materials 6 (joint session HL/CPP/DS)
HL 42.2: Vortrag
Freitag, 9. September 2022, 09:45–10:00, H36
Direct growth of monolayer MoS2 on nanostructured silicon waveguides — •A Kuppadakkath1, E Najafidehaghani2, Z Gan2, A Tuniz3, G Ngo1, H Knopf1, F Löchner1, F Abtahi1, T Bucher1, 5, S Shradha1, T Käsebier1, S Palomba3, N Felde4, P Paul1, T Ullsperger1, S Schröder4, A Szeghalmi1,4, T Pertsch1,4, I Staude1, 5, U Zeitner1, 4, A George2, A Turchanin2, and F Eilenberger1 — 1Institute of Applied Physics (FSU), Jena, Germany — 2Institute of Physical Chemistry (FSU), Jena, Germany — 3Sydney Nano, Camperdown, Australia — 4Fraunhofer IOF, Jena, Germany — 5Institute of Solid State Physics (FSU), Jena, Germany
We report for the first time the direct growth of Molybdenum disulfide (MoS2) monolayers on nanostructured silicon-on-insulator waveguides. Our results indicate the possibility of utilizing the Chemical Vapour Deposition (CVD) on nanostructured photonic devices in a scalable process. Direct growth of 2D material on nanostructures rectifies many drawbacks of the transfer-based approaches. We show that the van der Waals materials grow conformally across the curves, edges, and the silicon-SiO2 interface of the waveguide structure. Here, the waveguide structure used as a growth substrate is complex not just in terms of its geometry but also due to the two materials (Si and SiO2) involved. A transfer-free method like this yields a novel approach for functionalizing nanostructured, integrated optical architectures with an optically active direct semiconductor.