SKM 2023 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 1: 2D Materials and their Heterostructures I: Graphene
DS 1.3: Vortrag
Montag, 27. März 2023, 10:00–10:15, SCH A 316
Intercalation of indenene in SiC/graphene interface — •Cedric Schmitt1,2, Jonas Erhardt1,2, Tien-Lin Lee3, Timur Kim3, Simon Moser1,2, and Ralph Claessen1,2 — 1Physikalisches Institut, Universität Würzburg, D-97074 Würzburg, Germany — 2Würzburg-Dresden Cluster of Excellence ct.qmat, Universität Würzburg, D-97074 Würzburg, Germany — 3Diamond Light Source, Harwell Science and Innovation Campus, Didcot, UK
In the search for new quantum materials, ultrathin metals are highly interesting as they push bulk properties to the 2D limit and foster novel quantum effects. Unfortunately, unprotected metals are prone to oxidation in air, making them useless for transport devices. Here, we report about a capping method for 2D materials via metal intercalation. In this process an atomic metal monolayer is sandwiched between a SiC substrate and a graphene buffer layer, thus forming freestanding graphene, which protects the intercalated layer against oxidation. Previous intercalation studies focused mainly identifying stable allotropes but lack a detailed investigation of metal coverage and oxidation. Here, we study the intercalation of indenene, a monolayer of indium, which is a novel quantum material [1]. First experiments indicate the indenene layer to remain intact upon air exposure, indeed pointing to an effective protective function of the overlayer graphene. Furthermore, we observe an enlarged In-Si bond distance, which is expected to have a larger non-trivial energy gap.
[1] M. Bauernfeind et al. Nat. Commun. 12, 5396 (2021)