SKM 2023 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 12: Poster

DS 12.12: Poster

Mittwoch, 29. März 2023, 17:00–19:00, P3

Current probe AFM measurements on reactively co-sputtered Ag_xCu_1−xI thin films — Tillmann Stralka, •Sofie Vogt, Christiane Dethloff, Jorrit Bredow, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Felix-Bloch-Institut, Germany

CuI exhibits a high hole mobility of up to 44 cm²/Vs in bulk crystals and of about 19 cm²/Vs in polycrystalline thin films^[1,2]. This, combined with high transparency in the visible light range, renders CuI an interesting material for transparent complementary devices. However, grain boundary (GB) conduction is dominating electrical properties and might inhibit device performance^[3]. Annadi et al. showed that alloying with silver reduces the conductivity of Ag_xCu_1−xI thin films and even results in switching from p-type to n-type^[4].

We present topological and current probe (cp)-atomic force microscopy measurements on reactively sputtered Ag_xCu_1−xI thin films with silver contents from x=0.1 to x=0.6. A strong decrease of the grain size with increasing silver content is observed. In addition, a decrease of the overall surface current is observed, which agrees well with electrical bulk characterizations. For x≥0.39 we observed that the current from tip to sample is mainly injected at grain boundaries while for large Ag content the injected current at GBs is negligible.

^[1] D. Chen et al., Crystal Growth Design, 10, 2057*2060, 2010.
^[2] C. Yang et al., ACS Appl. Electr. Mater., 2, 3627-3632, 2020.
^[3] Kneiß  et al., Adv. Mater. Interfaces, 5, 1701411, 2018.
^[4] A. Annadi et al., Appl. Mater. Today, 20, 100703, 2020.