SKM 2023 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 12: Poster

DS 12.33: Poster

Mittwoch, 29. März 2023, 17:00–19:00, P3

In-situ spectroscopic ellipsometry measurement and analysis of native SiO2 behavior under different atmosphere and temperature — •Younes Slimi^1,2, Jannis Waldmann¹, Rüdiger Schmid-Gund¹, and Stefan Krischok¹ — ¹Technische Universität Ilmenau, Fachgebiet Technische Physik I, Weimarer Strafte 32, 98693 Ilmenau, Germany — ²Ferhat Abbas University, Institut of optics and precision mechanics, Optics and Applied Photonics laboratory 19000 Setif, Algeria

the most common wafer used in the semiconductor industry nowadays is silicon (Si), the latter oxidizes when left to its own devices. these silicon oxide layers' behavior was investigated using In-situ Spectroscopic ellipsometry to obtain optical constants and thin film thicknesses under different atmospheres (nitrogen, dry air) and temperatures. We found changes in the refractive index and thickness of the SiO2 layer under different conditions due to oxidation and material ablation. These results are meant to be used as possible references for future Electrochemical cells for in-situ Spectroscopic ellipsometry measurement for water splitting devices.