Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 18: Optical Properties (joint session HL/CPP)

HL 18.3: Vortrag

Dienstag, 28. März 2023, 10:00–10:15, POT 112

Polarized Raman scattering study of epitaxially grown GeSn layers with various Sn content — •Agnieszka Anna Corley-Wiciak¹, Omar Concepción², Marvin Hartwig Zoellner¹, Detlev Grützmacher², Dan Buca², Giovanni Capellini^1,3, and Davide Spirito¹ — ¹IHP Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany — ²Peter Grünberg Institute 9 (PGI-9) and JARA-Fundamentals of Future Information Technologies — ³Dipartimento di Scienze, Università Roma Tre, V.le G. Marconi 446, 00146 Roma, Italy

Ge_1−xSn_x alloys are an excellent candidate for developing mid-infrared light sources integrated with CMOS technology. The challenges in the controlled growth with high crystal quality have highlighted the peculiarity of these alloys, which can be monitored by their vibrational properties. To this purpose, Raman spectroscopy is an effective experimental method to determine these properties, as this technique is non-destructive, contactless, fast, and locally resolved. We use Raman scattering with different polarization configurations to investigate Ge_1−xSn_x (0.05 ≤ x ≤ 0.14) alloys grown by Chemical Vapour Deposition on Ge/Si virtual substrates. Measurements were performed in backscattering geometry with parallel and cross polarizations. In this way, we identify multiple components in the vibrational modes and how they deviate from simplified models. Our results will help to understand the fundamental properties of Ge_1−xSn_x alloys to enable fast assessment for their applications in optoelectronic and thermoelectric.