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HL: Fachverband Halbleiterphysik
HL 23: Focus Session: Breakthroughs in wide-bandgap semiconductor laser diodes I
HL 23.2: Invited Talk
Wednesday, March 29, 2023, 10:00–10:30, POT 251
Towards GaN-based diode lasers with narrow linewidth and high reliability — •Sven Einfeldt1, Erik Freier1, Ji-Hye Kang1, Hans Wenzel1, Anna Mogilatenko1, Johannes Glaab1, Asmaa Abou-Shewarib1, Veit Hoffmann1, Johannes Enslin1, Martin Guttmann1, Saad Makhladi1, Jörg Fricke1, Olaf Brox1, Mathias Matalla1, Maria Norman-Reiner1, Christoph Stölmacker1, Markus Weyers1, Luca Sulmoni2, Michael Kneissl2, Lukas Uhlig3, and Ulrich T. Schwarz3 — 1Ferdinand-Braun-Institut (FBH), Berlin, Germany — 2Technische Universität Berlin, Institut für Festkörperphysik, Berlin, Germany — 3Technische Universität Chemnitz, Institut für Physik, Chemnitz, Germany
Various applications require GaN-based diode lasers that not only operate in single-mode at well-defined wavelengths, but also exhibit a small linewidth and high reliability. Single-mode operation can be achieved via the distributed feedback (DFB) or distributed Bragg reflector (DBR) laser design, i.e. monolithic integration of gratings in the chip. We present here the current state of the art in fabrication technology and properties of DFB and DBR diode lasers with high-order laterally coupled surface gratings. These include continuous wave single-mode operation at room temperature with an optical power of up to 20 mW (DBR) and 70 mW (DFB), respectively, and spectral half widths of about 20 pm. We also show results of selected studies on the reliability of GaN-based lasers, in particular on the stability of the operating voltage, the evolution of spatial inhomogeneities in the current distribution in the chip, and the stability of the facets.