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HL: Fachverband Halbleiterphysik
HL 23: Focus Session: Breakthroughs in wide-bandgap semiconductor laser diodes I
HL 23.3: Hauptvortrag
Mittwoch, 29. März 2023, 10:30–11:00, POT 251
Use of wafer patterning for new functionalities of InGaN light emitters — •Anna Kafar1,2, Ryota Ishii3, Atsushi Sakaki4, Kiran Saba1, Conny Becht5, Szymon Grzanka1,2, Ulrich Schwarz5, Mitsuru Funato3, Yoichi Kawakami3, and Piotr Perlin1,2 — 1Institute of High Pressure Physics PAS, Warsaw, Poland — 2TopGaN Ltd., Warsaw, Poland — 3Kyoto University, Kyoto, Japan — 4Nichia Corporation, Tokushima, Japan — 5Chemnitz University of Technology, Chemnitz, Germany
In this work we present the use of patterning of bulk GaN substrates to control the growth of InGaN layers by metalorganic vapour-phase epitaxy. We demonstrate that using local change of substrate miscut, it is possible to obtain a spatial shift of emission energy of above 25 nm. Synchrotron radiation microbeam X-ray diffraction reveals that a significant change of In content in the QWs is possible between 9% and 18%. This approach can be used for example in fabrication of micro-arrays of laser diodes with different lasing wavelength. Another application is the fabrication of superluminescent diodes with broadened emission spectra by utilizing a profile of indium content along the device waveguide. Furthermore, we use the same concept to demonstrate monolithic light-guides integrated with laser diodes on the same wafer and fabricated based on the same epitaxy. We also study the possibility to use substrate patterning in a form of micro strips and discs regions of improved quality InGaN which can be used for fabrication of the active regions of the micro LEDs and laser diodes.