SKM 2023 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 24: Quantum dots: Optics
HL 24.9: Talk
Wednesday, March 29, 2023, 12:00–12:15, POT 151
Effect of tunnel barrier thickness on optical properties of GaAs quantum dots embedded in Schottky diode structures — •Nand Lal Sharma1, Moritz Langer1, Ankita Choudhary1, Oliver G. Schmidt2, and Caspar Hopfmann1 — 1Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany — 2Material Systems for Nanoelectronics, Technical University Chemnitz, 09107 Chemnitz, Germany
GaAs quantum dots (QDs) are promising candidates for on demand generation of single and entangled photon pair sources for quantum communication applications. In these QDs, the charge stability and optical linewidth depend on the solid-state environment, which can be controlled by embedding them in a diode structure [1]. In this work we investigate the effect of tunnel barrier thickness on the optical properties of droplet etched GaAs/AlGaAs QDs [2], embedded in Schottky diode structures. The QD photoluminescence from different charge states is controlled by application of an external bias. The effects of quantum dot charging, quantum confined Stark effect and photon coherence are investigated as a function of tunnel barrier thickness.