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HL: Fachverband Halbleiterphysik

HL 29: Materials and devices for quantum technology I

HL 29.9: Vortrag

Mittwoch, 29. März 2023, 17:30–17:45, POT 151

Structural and electrical characterization of the InAs/CdSe core/shell NWs — •Mane Kalajyan¹, Marvin Marco Jansen^1,2, Nils von den Driesch³, Erik Zimmermann¹, Nataliya Demarina⁴, Anton Faustmann¹, Gerrit Behner¹, Christoph Krause¹, Benjamin Bennemann¹, Jan Karthein¹, Detlev Grützmacher^1,3, Thomas Schäpers¹, and Alexander Pawlis^1,3 — ¹Peter Grünberg Institut (PGI-9), Forschungszentrum Jülich, Jülich, Germany — ²Eindhoven University of Technology, Eindhoven, Netherlands — ³Peter Grünberg Institut (PGI-10), Forschungszentrum Jülich, Jülich, Germany — ⁴Peter Grünberg Institut (PGI-2), Forschungszentrum Jülich, Jülich, Germany

InAs nanowires (NWs) are a well-known basis for field-effect transistors (FETs), light-emitting diodes and lasers, quantum devices and biosensors. The larger band gap material CdSe, having a negligible lattice mismatch to InAs, allows for tailoring the conductive channel at the CdSe/InAs core/shell interface, thus making CdSe an excellent candidate for the InAs surface states passivation.

Here, we present the fabrication, structural, and electrical characterization of a unique InAs/CdSe core/shell NW system. The interface between the core and the shell is proven to be flawless by means of HR-TEM micrographs. Moreover, electrical characterization reveals a high-mobility two-dimensional transport channel in the InAs core. Finally, magnetotransport measurements show clear signs of weak antilocalization. These results make the novel InAs/CdSe hybrid NWs a promising basis for the quantum device applications.