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HL: Fachverband Halbleiterphysik

HL 33: Poster II

HL 33.10: Poster

Wednesday, March 29, 2023, 17:00–19:00, P1

Black phosphorus field-effect transistors and its application — •Zahra Fekri¹, Himani Arora¹, Victoria Constance köst², Jens Zscharschuch¹, Krzysztof Nieweglowski², Kenji Watanabe³, Takashi Taniguchi⁴, Manfred Helm^1,2, Karlheinz Bock², and Artur Erbe^1,2 — ¹Helmholtz Zentrum Dresden Rossendorf, Dresden, Germany — ²Technische Universität Dresden, Dresden, Germany — ³Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan — ⁴International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan

Black phosphorus (BP) has been known as a more favorable material in many applications compared to other 2D materials due to its exceptional properties. However, its sensitivity to air species has restricted its integration into active devices. In this work, we used a few nm thickness BP for developing field-effect transistors (FETs). Lithography-free via-encapsulation scheme allows us to fabricate fully-encapsulated BP-based field-effect transistors and perform reliable electrical measurements. Based on our results, we find that the electronic properties of the via-encapsulated BP FETs are significantly improved compared to unencapsulated devices. We further demonstrated a gas-sensing performance based on the BP FET. Our Preliminary result shows the promising potential of BP for applications in advanced gas-sensing technology.