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HL: Fachverband Halbleiterphysik
HL 33: Poster II
HL 33.28: Poster
Wednesday, March 29, 2023, 17:00–19:00, P1
Zero-phonon line and electron-phonon coupling of the NV center in cubic silicon carbide: first-principles calculations — •Timur Biktagirov1, Hans Jürgen von Bardeleben2, Jean-Louis Cantin2, Wolf Gero Schmidt1, and Uwe Gerstmann1 — 1Universität Paderborn, Paderborn, Germany — 2Sorbonne Université, Paris, France
The nitrogen-vacancy (NV) center in cubic silicon carbide (3C polytype), the analog of the NV center in diamond, has recently emerged as a solid-state qubit with competitive properties and significant technological advantages [1, 2]. Most applications of NV centers are based on optical spectroscopy of the zero-phonon line (ZPL) and the analysis of the spin states. Thus, we use density functional theory (DFT) calculations to provide thorough insight into the ZPL and the related magneto-optical properties of this center. In the case of NV in diamond, the ZPL is known to be in the visible spectral range [3]. In contrast, we identify the ZPL of the NV center in 3C-SiC at 1289 nm (within the telecom O-band), which is more suitable for device applications due to low transmission losses in optical waveguides. An analysis of the measured phonon sideband reveals the Huang-Rhys factor of 2.85 and the Debye-Waller factor of 5.8 %. Along with exceptionally long low-temperature spin-lattice relaxation times [2], these properties make NV in 3C-SiC a strong competitor for qubit applications.
1. S. A. Zargaleh et al., Phys. Rev. B 98, 165203 (2018).
2. H. J. Von Bardeleben et al., Nano Lett. 21, 8119-8125 (2021).
3. M. W. Doherty et al., Phys. Rep. 528, 1-45 (2013).