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HL: Fachverband Halbleiterphysik

HL 33: Poster II

HL 33.38: Poster

Wednesday, March 29, 2023, 17:00–19:00, P1

Donor Spins in Compressively Strained Silicon — •Basak Cigdem Özcan, David Vogl, and Martin S. Brandt — Walter Schottky Institut and School of Natural Sciences, Technische Universität München, 85748 Garching, Germany

Silicon doped with donors is a promising system for quantum computing applications due to long coherence times, fast spin control and the possibility of scaling as well as integration with conventional microelectronics. In order to achieve long coherence times, coupling to other nuclear spins should be avoided. This is achieved by using isotopically purified Si-28 samples, which is the naturally more abundant isotope without nuclear spin. The conventional architecture to conduct measurements on doped Si-28 involves the placement of control and read-out gate structures on top of the sample. Such additional structures cause strain near the donors, which makes it important to understand the effect of strain on their spin properties. To study this under controlled strain conditions, we utilize a no-contact capacitive read-out scheme, where optical excitation of donor-bound excitons (DBE) followed by an Auger recombination facilitates spin-dependent excitation, spin polarization and spin-state read-out. Combining infrared optical excitation and microwave pulses, we perform electron nuclear double resonance (ENDOR) experiments, with which we achieve coherent control of nuclear spins of the donors. Here, we investigate the strain-dependent shift of DBE resonance frequencies under uniaxial compressive stress. We acknowledge the financial support of MCQST.