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HL: Fachverband Halbleiterphysik

HL 33: Poster II

HL 33.41: Poster

Wednesday, March 29, 2023, 17:00–19:00, P1

Indium incorporation in thin c-plane GaInN/GaN quantum wells grown via plasma-assisted molecular beam epitaxy — •Farouk Aljasem, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter — Institut für Angewandte Physik & Laboratory for Emerging Nanometrology, Technische Universität Braunschweig, Germany

This work aims to investigate the physical mechanisms of the incorporation of indium atoms in GaInN QW structures with an emphasis on interface properties by growing thin GaInN multiple quantum wells. A comparison of the obtained results using MBE with the results from the previous work using MOVPE offers more information about indium incorporation mechanisms. As well known, the flux of the activated nitrogen in the plasma-assisted molecular beam epitaxy (PAMBE) is independent of the growth temperature. This feature enables the growth of GaInN MQWs at low temperatures and in different growth regimes compared to MOVPE. Fivefold thin GaInN/GaN MQWs are grown via PAMBE in the c-direction using MOVPE-grown GaN templates on sapphire as substrates. The GaInN/GaN MQW samples were grown at different growth temperatures with various III/V ratios and QW thicknesses. MQW thickness ranged between less than half a c-lattice constant and 2 nm with no significant relaxation. To provide a precise understanding of the physical processes during the growth process of GaInN monolayers, the samples were characterized using HR-XRD, AFM, HR-TEM and CW-PL.