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HL: Fachverband Halbleiterphysik

HL 33: Poster II

HL 33.43: Poster

Wednesday, March 29, 2023, 17:00–19:00, P1

Indium incorporation during GaInN quantum well growth: role of underlayer surface morphology — •Rodrigo de Vasconcellos Lourenço^{1, 2}, Uwe Rossow¹, Philipp Horenburg¹, Heiko Bremers^{1, 2}, and Andreas Hangleiter^{1, 2} — ¹Institute of Applied Physics, Technische Universität Braunschweig, Germany — ²Laboratory for Emerging Nanometrology, Technische Universität Braunschweig, Germany

The control of Indium incorporation is a key factor for the optoelectronic devices in the visible and near UV spectral region. The luminescence efficiency of such devices has been improved by the so-called underlayer, i.e the layer grown just before the active region. We investigate the surface morphology as function of the underlayer (UL) composed of GaN or InAlN. For GaN UL, we find extended, very smooth terraces separated by macrosteps in a range of growth temperature from 770 to 950 ^∘C. Additionally, morphologies associated to the Ehrlich-Schwöbel barrier are not observed. On the other hand, for InAlN UL lattice matched to GaN, evidence for nuclei forming at step edges is observed, which may be due to lower surface mobility of Al compared to Ga or In. In the next step, we want to understand how the underlayer morphology affects the Indium incorporation of GaInN quantum wells.