Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 33: Poster II

HL 33.57: Poster

Wednesday, March 29, 2023, 17:00–19:00, P1

Electric field assisted transport in photodiodes studied by EBIC and STEM — •Lennart Nolte¹, Christoph Flathmann¹, Tobias Meyer², and Michael Seibt¹ — ¹IV. Physical Institute, University of Goettingen, Göttingen, Germany — ²Institute for Materials Physics, University of Goettingen, Göttingen, Germany

P-i-n diodes consist of an intrinsic layer sandwiched between an n- and p-doped layer. Due to lack of carriers in the intrinsic layer, it shows a high Ohmic resistance and realizes more extended depletion zones compared to a typical p-n junction. This makes p-i-n-diodes particularly interesting for high frequency and high voltage electronic applications in addition to photo detection. In this study, we perform electron beam induced current (EBIC) investigations in cross-section geometry combined with scanning transmission electron microscopy (STEM) in order to study electric field assisted diffusion of excess carriers on a nanometer scale under well-defined experimental conditions. Special focus will be on carrier recombination at surfaces produced by focused ion beam (FIB) preparation.