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HL: Fachverband Halbleiterphysik
HL 33: Poster II
HL 33.8: Poster
Wednesday, March 29, 2023, 17:00–19:00, P1
investigation of structural and electronic properties of monolayered MoS2 and graphene compared to the MoS2/graphene heterostructure — •Ateeb Shaban1, Nebahat Bulut2, Jakob Kraus2, Franz Selbmann1, Jens Kortus2, and Yvonne Joseph1 — 1TU Bergakademie Freiberg, Institute of Electronic and Sensor Materials, Germany — 2TU Bergakademie Freiberg, Institute of Theoretical Physics, Germany
Graphene and other 2D materials have been shown to have interesting structural and electronic properties. Transition metal dichalcogenides such as molybdenum disulfide (MoS2) and tungsten diselenide (WSe2) have tunable bandgaps that change from indirect to direct when decreasing the number of layers. This property allows for applications such as transistors and sensors. On the other hand, graphene is an ideal channel material. It is used as an electronic sensor in field-effect transistors due to the high sensitivity toward the change in the surrounding environment. These remarkable electronic and structural properties of graphene, being highly susceptible and conductive, have reignited the interest in 2D materials. Subsequently, building variable stacks of 2D van-der-Waals (vdW) structures can open the possibility of designing materials with specific properties across various chemistry’s and systems.
In this theoretical work, we analyze and review the properties of MoS2 and graphene individually and study their cumulative effect on the electronic and structural properties of the MoS2/graphene vdW heterostructure using density functional theory.