SKM 2023 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 34: 2D Materials V (joint session HL/CPP)

HL 34.4: Vortrag

Donnerstag, 30. März 2023, 10:15–10:30, POT 81

Electrical Characterization of Thin ZrSe₃ Films — •Lars Thole¹, Christopher Belke¹, Sonja Locmelis², Peter Behrens², and Rolf J. Haug¹ — ¹Institut für Festkörperphysik, Leibniz Universität Hannover, 30167 Hannover, Germany — ²Institut für Anorganische Chemie, Leibniz Universität Hannover, 30167 Hannover, Germany

Two dimensional materials have been of great interest in the past years, because of their huge potential for new applications [1]. While graphene has been extensively researched, a lot of other materials have emerged. One of the most notable groups are the transition metal chalcogenides because of their variety of different compounds. Among these the lesser known transition metal trichalcogenides show unique properties [2].

Here, we have researched the transition metal trichalcogenide ZrSe₃ [3]. Its bulk material was produced by a chemical vapor transport method and was then exfoliated to obtain thin films. Electrical measurements show a band gap of 0.6 eV which increases for thinner samples. The material is shown to be an n-type semiconductor by transistor measurements and a mean free path of about 103 nm was determined by looking at different samples with varying thicknesses.

[1] A. K. Geim, I. V. Grigorieva, Nature, 499, 419-425 (2013).

[2] J. O. Island et al., 2D Materials, 4, 0220033 (2017).

[3] L. Thole et al., ACS Omega, 7, 39913 (2022).