SKM 2023 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 34: 2D Materials V (joint session HL/CPP)
HL 34.5: Vortrag
Donnerstag, 30. März 2023, 10:30–10:45, POT 81
Electrically active deep defects in 2D vdW semiconductors — •Michele Bissolo1, Rongxin Li1, Masako Ogura2, Svitlana Polesya2, Hubert Ebert2, Eugenio Zallo1, Gregor Koblmüller1, and Jonathan J. Finley1 — 1Walter Schottky Institute and TUM School of Natural Sciences, Technical University of Munich, Am Coulombwall 4, 85748 Garching, Germany — 2Department of Chemistry/Phys. Chemistry, LMU Munich, Butenandtstrasse 11, 81377 Munich, Germany
Mid-gap defect states in semiconductors can both potentially degrade the performance of (opto)electronic devices and simultaneously act as a platform for technologies such as (photo)catalysis and quantum computing. Characterizing the electrically active mid-gap defects in the emerging class of 2D van-der-Waals materials is thus a necessary step in the development of future 2D-based devices. Here, we employ Deep Level Transient Spectroscopy (DLTS) techniques to directly probe deep defects in transition metal dichalcogenides (TMDCs) and group-III monochalcogenides (III-MCs), which have recently gained traction in ”more-than-Moore”, low-power and renewable energy device applications. Unlike transmission electron or scanning tunneling microscopies, DLTS is both a non-destructive and bulk sensitive technique that provides multiple information on the electronically active defect states, such as concentration, energy and capture cross section. DLTS spectra are collected from few-layer MoS2, MoSe2 and GaSe Schottky diodes in the 10-300 K temperature range with 10 mK stability, and the properties and role of the observed defects are discussed.