SKM 2023 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 34: 2D Materials V (joint session HL/CPP)
HL 34.6: Vortrag
Donnerstag, 30. März 2023, 11:00–11:15, POT 81
Ionic based gate control of insulator-to-metal phase transitions on ZrS2 — •Jose Guimaraes1,2, Dorsa Fartab1, Marcus Schmidt1, and Haijing Zhang1 — 1Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany — 2School of Physics and Astronomy, University of St Andrews, St Andrews KY16 9SS, UK
The possibility of tuning the properties of solids, such as their carrier density, allows for the amplification of their potential: In the context of 2D materials, ionic liquid gating provides a highly efficient doping alternative to traditional chemical doping.
Transitional metal dichalcogenides (TMDCs) have emerged as a potential 2D replacement for silicon in many technological applications, however their carrier mobility needs to be vastly increased. Ionic liquid gating enables carrier concentrations of the order of 1014 carriers per cm2 in certain TMDCs, moreover, it allows for the emergence of unique physical phenomena, such as ambipolar behaviour. To realize transistor applications, materials that can be easily switched between p-type and n-type by applying an electric field are essential to minimize circuit size.
Here, an overview of the ionic liquid gating technique is given, including device fabrication and characterization methods, focusing on the TMDCs: ZrS2 and ZrSe2. Being ZrSe2 an oxygen sensitive material, a method of estimating its thickness by its optical image is discussed. Furthermore, experimental efforts reporting ambipolar behaviour in ZrS2 for the first time are presented.