SKM 2023 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 36: Transport properties
HL 36.2: Vortrag
Donnerstag, 30. März 2023, 09:45–10:00, POT 151
Active Dopant Sites in Hyperdoped Si and Ge Investigated by Photoemission — •Moritz Hoesch1, Mao Wang2, Slawomir Prucnal2, Shengqiang Zhou2, Olena Fedchenko3, Christoph Schlüter1, Katya Medjanik3, Sergey Babenkov3, Anca Ciobanu1, Dmitrii Potorochin1,4, Sanjoy Mahatha1,5, Markus Scholz1, Quynh Nguyen6, Aimo Winkelmann7, H.-J. Elmers3, and Gerd Schönhense3 — 1DESY Photon Science, Hamburg, Germany — 2Helmholtz-Zentrum Dresden-Rossendorf, Germany — 3JGU, Institut für Physik, Mainz, Germany — 4TU Bergakademie Freiberg, Germany — 5UGC-DAE, Indore, India — 6SLAC, Menlo Park, USA — 7AGH University of Kraków, Poland
Hyperdoping of silicon and germanium, with dopant concentration well above the thermal solubility limit, is achieved by ion implantation followed by pulsed laser or flash lamp annealing. Here, we probe the materials by photoemission spectroscopy thus revealing the metallic carriers in the valence region as well as core level shifts of the dopant species. The samples are p-doped Ge:Ga and n-doped Si:Te, both well into the metallic regime. The latter shows non-saturating growth of the free carrier concentration with increasing doping [1]. We present experimental determinations of the Fermi surfaces of these materials by soft x-ray ARPES as well as geometrical structure measurements by photoelectron diffraction [2,3].
[1] M. Wang et al. Phys. Rev. Appl. 11 054039 (2019). [2] O. Fedchenko et al NJP 21, 113031 (2019); [3] O. Fedchenko et al NJP 22, 103002 (2020).