SKM 2023 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 38: Functional semiconductors for renewable energy solutions I
HL 38.6: Vortrag
Donnerstag, 30. März 2023, 11:15–11:30, POT 6
Dependence of the activation energy of light-induced degradation (LID) in silicon on the illumination intensity — •Kevin Lauer1,2, Katharina Peh1, Dirk Schulze1, and Stefan Krischok1 — 1Technische Universität Ilmenau, Institut für Physik und Institut für Mikro- und Nanotechnologien, Ilmenau, Germany — 2CiS Forschungsinstitut für Mikrosensorik GmbH, Erfurt, Germany
It was found that the activation energy of the dissociation process of the acceptor-iron defects (ASi-Fei) in silicon depends on the illumination intensity.[1] This implies that besides the thermal energy an additional supply of energy due to e.g. carrier recombination is possible in that defect reaction. To check whether this is also the case for the slow process of the light-induced degradation (LID) in silicon,[2] which can be explained by acceptor-silicon defects (ASi-Sii),[3] we measured the activation energy for the slow LID process for different illumination intensities. No impact of the illumination intensity on the activation energy of the slow LID process could be found indicating a pure thermally activated process.
[1] K. Lauer, C. Möller, D. Debbih, M. Auge, and D. Schulze, Solid State Phenom. 242, 230 (2015).
[2] J. Lindroos and H. Savin, Sol. Energy Mater. Sol. Cells 147, 115 (2016).
[3] K. Lauer, K. Peh, D. Schulze, T. Ortlepp, E. Runge, and S. Krischok, Phys. Status Solidi A 219, 2200099 (2022).