SKM 2023 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 42: Quantum dots: Growth

HL 42.4: Vortrag

Donnerstag, 30. März 2023, 15:45–16:00, POT 151

Maximizing Homogeneity of GaAs LDE-QDs on Full Wafer Scale — •Hans-Georg Babin, Timo Kruck, Andreas D. Wieck, and Arne Ludwig — Lehrstuhl für angewandte Festkörperphysik, Ruhr-Universität Bochum, Deutschland

Local droplet etched GaAs quantum dots (LDE-QDs) are a promising candidate for excellent single and entangled photon sources. [1] Taking further steps towards application, this requires structures of increasing complexity, engineering the electronic and photonic environments of the QDs. [2] In previous studies, we showed how properties of GaAs LDE-QDs can be modulate, containing both 737 nm and 795 nm QDs on a single wafer. [3]

However, in device mass production, for example for creating larger quantum networks, it can also be intriguing to maximize the useable area of the produced wafer. This means for the QDs, that the ensemble should be of high homogeneity locally, but also on global wafer scale. Due to the short deposition times of material during LDE this can be challenging due to intrinsic inhomogeneities. We overcome these problems by matching the substrate rotation time with the material deposition time. With this method we receive light emitting QDs on over 96 % of the wafer, with 86 % of the wafer emitting between 792 nm and 802 nm (peak-center). The mean ensemble FWHM of the QD emission is as low as (11.3+-0.4) meV.

[1] Huber, Daniel et al., Nat. Commun. 8 (1), S. 15506 (2017).

[2] Zhai, Liang et al. Nat. Commun. 11 (1), S. 4745 (2020).

[3] Babin et al.; J. Cryst. Growth 591, S. 126713 (2022)